Datasheet4U Logo Datasheet4U.com

AO6601 - MOSFET

Description

The AO6601 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • n-channel p-channel -30V VDS (V) = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60m Ω (VGS = 10V) < 135m Ω (VGS = -10V) < 75m Ω (VGS = 4.5V) < 185m Ω (VGS = -4.5V) < 115m Ω(VGS = 2.5V) < 265m Ω (VGS = -2.5V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Diss.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AO6601 N- and P-Channel 20V MOSFET VBsemi
AO6604 Dual-Channel MOSFET VBsemi
AO6403 P-Channel MOSFET VBsemi
AO6409A P-Channel MOSFET VBsemi
AO6800 Dual N-Channel MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AO6602 30V Complementary MOSFET
AO6603 MOSFET
AO6604 20V Complementary MOSFET
AO6604L MOSFET
AO6605 MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AO6601 Complementary Enhancement Mode Field Effect Transistor General Description The AO6601 uses advanced trench technology to www.DataSheet4U.com provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6601L is a Green Product ordering option. AO6601 and AO6601L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60m Ω (VGS = 10V) < 135m Ω (VGS = -10V) < 75m Ω (VGS = 4.5V) < 185m Ω (VGS = -4.5V) < 115m Ω(VGS = 2.5V) < 265m Ω (VGS = -2.
Published: |